M/A-com SOT-23, MUR420, 1N4007
M/A-com, Metelics, M-Pulse, MicroMetrics. All SRD makers start with 
 the letter "M"

http://www.scottyspectrumanalyzer.com/srd/srd.html
______________________________________________________________________
My favorite Grekhov diode is the c-b junction of a power transistor! 
 Probably nobody else in the world knew that when I discovered it. A 
 qualitative understanding of semiconductors are enough to train one's 
 instincts. I did suspect that this particular transistor was a 
 diffused junction device, and that diffused junctions can have SRD 
 doping profiles. But I didn't need to understand the gory details. 

 John
______________________________________________________________________
There's also the Grehkov drift step-recovery effect: a diode that 
 normally would be a mediocre, soft snapper (classic mode, dc forward 
 bias followed by rapid current reversal) can become a very nice, very 
 fast step-recovery diode if it's only forward biased for a few hundred 
 ns. The charges don't have time to spread out much, so are swept away 
 very cleanly when the current reverses. 

 This can play nicely into the typical anti-shoot-through gate drive 
 timing of a fet totem pole: 

 current happens to be flowing into the motor, 
 bottom n-fet is on, conducting "backwards", 
 drop the bottom n-fet gate drive, 
 wait a couple hundred ns for anti-overlap, 
 during which time the drain swings negative and the 
 substrate diode conducts, 
 then the upper fet turns on, 
 fet-fet current builds up big time, 
 lower fet substrate diode snaps off, 

 zowie! 
 John
______________________________________________________________________
The higher-voltage power diodes, like a 4007, tend to act like PIN
 diodes. They can make decent drift step-recovery diodes, too.

 Try this some time: apply 48 volts in the forward direction to a
 1N4007 or 1N4009. The current will ramp up pretty linearly to numbers
 like 50 amps in 100 ns or so. Now apply a lot of reverse current, like
 50 amps, through a small inductor. It will conduct in the reverse
 direction for maybe 50 ns then snap off, making a huge (kilovolt
 maybe) spike across the inductor, just a couple ns wide. Lotsa EMI.

 Power rectifiers can do the step-recovery thing even at 60 Hz. That
 can cause mysterious problems elsewhere in a box.

 A Russian guy, Grehkov, discovered the DSRD effect and another, even
 faster plasma breakdown effect, in common power diodes.

 John

>How the hell do you do that, for just the 100ns? Surely any device
>that could deliver the 48 volts and 50 amps would produce heaps of
> EMI all by itself?

 We just used some power mosfets. The forward bias supply was 48 volts
 and the reverse was 400. We used a different diode, something we could
 cool properly, to get the rep-rate up. But lots of cheap power diodes
 will snap like gangbusters.

http://www.highlandtechnology.com/DSS/T220DS.html

ftp://jjlarkin.lmi.net/T220_Neon.jpg


 We designed this for the LEAP tomographic atom probe. Didn't sell
 many, but it was fun. Lots of things turn out to be fun but don't sell
 many.

 John

______________________________________________________________________
John Larkin wrote:

 > A 1N4007 can also be used as a drift step-recovery diode and as a
 > plasma avalanche diode. Together, two can generate a kilovolt edge
 > with a 100 ps risetime.

 Okay, so I'm intrigued already. I have all the hardware available--two
 1N4007s and a 3 kV adjustable power supply! How do I build one?

 Cheers,

 Phil Hobbs


Google "Grekhov diode." A lot of the papers are for members only, but
 this one gives the general idea:

http://www.ece.jhu.edu/~pps/ECE777/ADMAT/CircDev/Pulse-GENERATORS-SHAPERS/sub-nano-pulse1.pdf

> Look up Grekhov Diode. It's pretty much a regular rectifier used as a
> HV SRD. The trick is to forward bias it (like, 50 volts forward!) for
> a few 10's of ns, then reverse it hard.

 Grekhov discovered both the DSRD and the plasma avalanche effects in
 cheap power diodes. The core of the DSRD effect is that, if a PIN
 diode is forward biased for not too many nanoseconds, the carriers
 don't have time to float all around the place so the charge profile is
 good for a nice reverse snap. HP did the same thing in their classic
 1430 12-GHz sampling head, circa 1965 roughly.

 This box used the DSRD effect, in a semiconductor that one would not
 expect to be used in an application like this...

http://www.highlandtechnology.com/DSS/T220DS.html

 We bias the snap diode +48 volts (yes, forward direction) for about 80
 ns before we turn the drive around for the snap. It was originally
 designed for use in a LEAP atom probe.

 John

______________________________________________________________________

On 28 Oct 2003 19:38:42 -0800, (E-Mail Removed) (Dyan Ali)
 wrote:

 >Hello,
 >I'm trying to design an ultrafast pulse generator, one that operates
 >at 3.4kV, has rise times and fall times ~1 nsec and a pulse width of
 >about 5-6 nsec.I need the pulse rate to be 10Hz. I've got hold of a
 >few papers by R.J.Baker (available at
 >http://cmosedu.com/jbaker/papers.htm) but they provide info on
 >designing broader pulses, maybe because the power MOSFETs he was
 >working with were inherently slower. Is such a design possible? Could
 >someone help me out?
 >-Dyan


 Fets are too slow for your risetimes.

 There are a few ways to do this:

 1. A stack of avalanche transistors, probably dumping a coaxial
 energy-storage line into your load. You'd need about 10-20 of them in
 series, depending, probably the Zetex SOT-23 (!) parts. There are
 papers around on how to do this.

 2. A triggered spark gap or a krytron tube. Very simple.

 3. A DSRD (drift step-recovery diode) or Grehkov avalanche diode.

 4. A coaxial reed relay, again dumping a storage line into your load.
 The relay can be inside a tube that *is* the coaxial system. Cheap,
 clean, *lots* of jitter if it matters, maybe reasonable life at 10 Hz.

 5. Maybe even a regular relay. This actually works sometimes, even at
 these speeds.

 6. Buy it from the Russians; they are very good at this sort of stuff.


 If any of these are interesting, let me know and I can find a few
 paper references at work tomorrow.

 Any of these would be a *serious* development project, except maybe 2)
 or 4) or 5), which wouldn't be as terrible.

 Measurement will be interesting.


 I currently make a 2KV thing that's sort of in the ball park...

http://www.highlandtechnology.com/DSS/T220DS.html

 which used DSRDs, and we're working on other techniques for bigger
 stuff.


 What's your application? What's the load like?

 John

>I'm actually trying to build my own driver for a KDP Q-Switch, so that
 >translates to a capacitance of 5pF (at 1kHz). The thing is that we are
 >trying to ubild one such device rather than buy it.
 >Dyan


 OK, cool. You only need half the voltage at the pulser if you use a
 longish coax feed and let the pulse voltage naturally double at the
 end. And I presume you can't tolerate much jitter, so relays are out.

 A krytron can give you jitter close to 1 ns, and avalanche transistors
 will be even better. There should be lots of journal papers on stuff
 like this (RSI, NIM, etc), and Zetex has some app notes.

 John
______________________________________________________________________
Actually, it acts more like, no, it acts exactly like a battery. The 
 voltage is almost constant until the charge is gone -- that means the 
 diode is actually producing energy (positive voltage, negative current) as 
 the charge leaves.

 FYI, a simulation of 1N4007 driven at If = 1A and turning off at -100A/us 
 reaches a peak current I_rr of 6.978A in 69.7ns before turning off. A 
 proper high speed diode like MUR420 does it in 1/3 the time, and 
 accordingly about 1/9th the charge (Q_rr).

 Real recovery time of a 1N4007 is probably a lot worse (4us+?).

 Tim

The higher-voltage power diodes, like a 4007, tend to act like PIN 
 diodes. They can make decent drift step-recovery diodes, too. 

 Try this some time: apply 48 volts in the forward direction to a 
 1N4007 or 1N4009. The current will ramp up pretty linearly to numbers 
 like 50 amps in 100 ns or so. Now apply a lot of reverse current, like 
 50 amps, through a small inductor. It will conduct in the reverse 
 direction for maybe 50 ns then snap off, making a huge (kilovolt 
 maybe) spike across the inductor, just a couple ns wide. Lotsa EMI. 

 Power rectifiers can do the step-recovery thing even at 60 Hz. That 
 can cause mysterious problems elsewhere in a box. 

 A Russian guy, Grehkov, discovered the DSRD effect and another, even 
 faster plasma breakdown effect, in common power diodes. 

 John

A step-recovery diode needs a hyperbolic doping profile, which regular 
 diffusion can make, on purpose or not. The SRD was discovered 
 accidentally by Boff at HP, in the 60s. There's some history in the 
 old HP Journals. They were originally called "Boff diodes" but the 
 name didn't catch on. 

 A modified doping profile can make a "soft recovery" power rectifier 
 diode that still stores a lot of charge but doesn't snap. 

 John
______________________________________________________________________
> I have a diode that I want to model, it's a 85HF20. 
> <http://www.vishay.com/docs/93529/85hf.pdf> 
> This is one of those standard stud mounted rectifiers.

If you're concerned about the "forward recovery time" thing, I doubt 
 that a model will be very useful. You'd really need to test an actual 
 part to see how it behaves. To complicate life, several of the 
 different voltage rated versions may at various times come off the 
 same wafer. 

In general, higher voltage parts have wider junctions, approaching pin 
 diodes for, say, 600 volt parts, and they tend to be slower turning 
 on. I've slammed 48 volts across a 600 volt "fast recovery" diode and 
 it took a couple hundred nanoseconds to ramp up to 50 amps. 

What's your circuit? 

John

The diode in question is inside this: 
http://www.highlandtechnology.com/DSS/T220DS.html 

It's a drift step-recovery (Grehkov) diode, or rather a commercial 
 power diode used in DSRD mode. I assure you that we know exactly what 
 we're doing here, and the diode behaves as described. The inductance 
 of the drive circuit (+48 volts followed by -400) is around 8 nH. The 
 pulser was desiged to rip ions off a microtip in a tomographic atom 
 probe. 

Google the obvious and learn something. Start here: 
http://www.avtechpulse.com/papers/thesis/8/ 

John

Yikes. High voltage pn diodes have big lightly-doped (intrinsic) 
 regions so act like/are PIN diodes. They turn on and off slow. 

SiC diodes are a lot faster, assuming you have too much voltage to use 
 schottkies. Infineon? Cree? You'd probably need a few in parallel to 
 handle that current and keep the parasitic inductance down. 

John

______________________________________________________________________
>>> Some of the 4000 series behave more like PIN diodes.
 >>
 >> The higher-voltage ones ARE pin diodes. They can make excellent drift
 >> step-recovery diodes and impact avalanche diodes. Need 1000 volts in
 >> 100 picoseconds?
 >>
 >
 >Do you have some examples and pics? That would be interesting, I have
 >use the 1N4007 as a RF PIN diode but never as SRD.

 Google "Grehkov diode". He's a Russian guy who discovered the DSRD and
 impact avalanche effects in cheap power diodes.

 Also look for papers and patents by Thomas E. McEwan.

 We did one water-cooled DSRD pulser that makes -2KV pulses, about 2 ns
 wide, at 500 KHz. We forward-bias a secret diode at +48 volts for
 about 80 ns, to let the current build up to 50 amps or so, then
 reverse-bias it from a 400 volt supply and wait for it to snap.

 Here's the pulser head...

http://www.highlandtechnology.com/DSS/T220DS.html

 with the serious parts bolted to a gold-plated copper block. A
 water-flow cold plate gets bolted to the bottom.

 I can show you innards privately. The HV, high power PIN diode turned
 out to be unusual.

 John

Yes. We did wind up with a reel of FR804's that snap nicely, maybe
 decent PIN diode material, but we went to a bigger part in the end,
 higher voltage and more power dissipation.

 It was fun, but we only sold a few.
______________________________________________________________________
GeoAdmin » Sun Aug 08, 2010 9:12 am
I'd suggest you to try for starters the ones based on avalanche transistors. Zetex has nice ones that work
very well, a paper on those can be found here: 
http://www.diodes.com/_files/design_note_pdfs/zetex/dn24.pdf
drift step recovery diodes are pretty simple devices, but I haven't seen a fast enough radar based on them with decent results.
This however is my very own opinion and I haven't seen them all obviously, so if you feel comfortable with those then perhaps is 
worth trying them.